Policrystalline layer of zinc oxide

Description

Zinc oxide (ZnO) thin films are obtained by atomic layer deposition (ALD) on many substrates, like Si, GaN, SiC, Al₂O₃ SiO₂ etc. The material is formed in a double exchange chemical  reaction between two reactants (precursors), such as a deionized water (oxygen precursor) and a diethylzinc - DEZ (zinc precursor). The use of a ammonia water (NH₃۰H₂O) instead of deionized water as a oxide precursor in a growth process increases the electrical resistance of zinc oxide layers. ZnO can be grown at the temperature range from 25°C to 300°C. The maximum size of the substrate is 20 cm of a diameter.

Specification

• Thickness: 10 - 3000 nm
• Growth rate: 0.4 nm/min
• Mobility carrier: 2 - 30 cm²/Vs
• Concentration carrier: <10²⁰ cm^-3
• Resistivity: 0.001 - 10⁹Ωcm
• Carrier type: n
• Energy gap: 3.4 eV
• Refractive index: 1.9 (635 nm)
• Surface roughness: 1 nm < RMS < 30 nm
• Crystal structure: wurtzite in hexagonal phase
• Average transmission in visible spectra:> 80%
• Uniformity of coatings

Applications

ZnO is semiconductor material, which is investigated for many possible applications in electronics, optoelectronics and photovoltaics. Physical and chemical properties of ZnO give us a great possibility of use of this material in devices, such as display panels, light emitting diodes or solar cells. Due to a wide band gap, ZnO is a transparent material in the visible range, so it can successfully be used in the so-called. "transparent electronics." Simultaneously, ZnO has a very high sensitivity and thermal stability, which makes it suitable for applications in sensor devices.