Oxide composite layers

Description

Oxide composite layer are obtained by atomic layer deposition (ALD) on any substrate like Si, GaN, SiC, graphene, SiO₂, natural and artificial materials, in particular on the fiber surface, etc. Materials are formed in a double exchange chemical  reaction between two reactants (precursors) such as a oxygen precursor and a metal precursor. The composite layers may consist of spacers of oxide materials having a thickness of nanometers. Oxides can be grown at the temperature range from 25°C to 300°C depending on the precursors used. The maximum size of the substrate is 20 cm of a diameter.

Specification

• Materials: ZnO, Al₂O₃, TiO₂, HfO₂, ZrO₂
• Thickness: 10 - 3000 nm
• Growth controll in the nanometer scale
• Growth rate: 0.1 - 0.4 nm/minute
• Hydrophobic properties
• Antybacterial properties
• Resistivity:>10⁸Ωcm (dielectrics), >0.001Ωcm (ZnO)
• Surface roughness: 0.2 nm < RMS < 30 nm
• Energy gap: > 3 eV
• High refractive index (635 nm): > 1.6
• Relative permittivity (dielectrics): 9 - 40
• Average transmission in visible spectra:> 80%
• Uniformity of coatings
• Uniform coverage of three-dimensional surface (nanorods)

Applications

The wide band gap oxides are characterized by desirable optical, electrical and structural properties (for example: different values ​​of the refractive indices, different electrical properties, different values ​​of energy gap, etc.). Due to such properties the best solution is to use composite layers as insulators in the electronics, a variable resistance materials in electronic memories, as optical coatings having different refractive indices in lasers and microscopes and as  protective layers.

Patent application:  P.395639 (13-07- 2011)