Materials - Oxide composite layers

Oxide composite layers


Oxide composite layer are obtained by atomic layer deposition (ALD) on any substrate like Si, GaN, SiC, graphene, SiO2, natural and artificial materials, in particular on the fiber surface, etc. Materials are formed in a double exchange chemical  reaction between two reactants (precursors) such as a oxygen precursor and a metal precursor. The composite layers may consist of spacers of oxide materials having a thickness of nanometers. Oxides can be grown at the temperature range from 25°C to 300°C depending on the precursors used. The maximum size of the substrate is 20 cm of a diameter.



  • Materials: ZnO, Al2O3, TiO2, HfO2, ZrO2
  • Thickness: 10 - 3000 nm
  • Growth controll in the nanometer scale
  • Growth rate: 0.1 - 0.4 nm/minute
  • Hydrophobic properties
  • Antybacterial properties
  • Resistivity:>108Ωcm (dielectrics), >0.001Ωcm (ZnO)
  • Surface roughness: 0.2 nm < RMS < 30 nm
  • Energy gap: > 3 eV
  • High refractive index (635 nm): > 1.6
  • Relative permittivity (dielectrics): 9 - 40
  • Average transmission in visible spectra:> 80%
  • Uniformity of coatings
  • Uniform coverage of three-dimensional surface (nanorods)



The wide band gap oxides are characterized by desirable optical, electrical and structural properties (for example: different values ​​of the refractive indices, different electrical properties, different values ​​of energy gap, etc.). Due to such properties the best solution is to use composite layers as insulators in the electronics, a variable resistance materials in electronic memories, as optical coatings having different refractive indices in lasers and microscopes and as  protective layers.


Patent application:  P.395639 (13-07- 2011)

Oxide composite layer Al2O3:HfO2 obtained by ALD on a silicon substrate. The thicknesses of Al2O3 and HfO2 layers were respectively 16 and 4 nm.

The smooth surface (RMS 0.2 nm) of oxide composite layer consisting of Al2O3 and HfO2 obtained on a silicon substrate by AFM.

The oxide composite layer consisting of ZnO and HfO2 obtained by ALD on a silicon substrate.