Technological services - Physical vapor deposition (PVD)

Physical vapor deposition (PVD)

Description

Physical vapor deposition (PVD) is a deposition technique of thin films from the vapor phase with use of physical phenomena, such as magnetron sputtering or cathodic sputtering. Growth process proceeds in a high vacuum system. Deposited materials crystallize on the substrate surface.

 

Specification

  • Growth temperature range: 25 - 350 ° C.
  • The maximum size of the substrate: 20 cm diameter
  • Film thickness: 10 - 3000 nm
  • The growth rate range: 0.5 - 15 nm / min
  • Controlled growth in the nanometer scale

 

Applications

Evaporation of metal contacts like Au, Ni, Pt, Ag, Ti, etc. for electronic, optoelectronic and photovoltaic structures. This method is also used by us for the deposition of thin oxide layers like ZnO, ZnO:Al etc.

 

 

 

PVD reaktor.

The surface of the gold and oxide layer junction made ​​with spattering.

Uniform gold layer obtained on a steel substrate.