Materials - Photovoltaic structures based on ZnO

Photovoltaic structures based on ZnO

 

Description

We developed technology of production of inexpensive photovoltaic structures based on zinc oxide layers grown by the atomic layer deposition method. Cheap p-type silicon substrates are used by us in the produced photovoltaic structures. Zinc oxide doped with aluminum is used as a transparent conductivity electrode.  Such relatively simple and cheap solar cells show 6 % efficiency at 100 mW/cm2.

 

Specification

  • Growth temperature: 160 °C
  • The maximum size of the substrate: 20 cm diameter
  • ZnO film thickness : 1600 nm
  • ZnO electrical parameters:

                   n=1.6x1019 cm-3

                   ρ=1.8x10-2 Ωcm

  • ZnO:Al film thickness : 300 nm
  • ZnO:Al electrical parameters:

                   n=3.6x1020 cm-3

                   ρ=1.2x10-3 Ωcm

  • Uniform coverage of three-dimensional surface (nanorods)
  • Growth controll in the nanometer scale

 

Schematic drawings of the investigated solar cells structures based on zinc oxide layers.

Light current-voltage characteristics for the ZnO:Al/ZnO/Si/Al heterostructures.

Spectral response of the invastigeted PV structure based on zinc oxide layers.