Materials - Photovoltaic structures based on ZnO
Photovoltaic structures based on ZnO
|
DescriptionWe developed technology of production of inexpensive photovoltaic structures based on zinc oxide layers grown by the atomic layer deposition method. Cheap p-type silicon substrates are used by us in the produced photovoltaic structures. Zinc oxide doped with aluminum is used as a transparent conductivity electrode. Such relatively simple and cheap solar cells show 6 % efficiency at 100 mW/cm2. Specification- Growth temperature: 160 °C
- The maximum size of the substrate: 20 cm diameter
- ZnO film thickness : 1600 nm
- ZnO electrical parameters:
n=1.6x1019 cm-3 ρ=1.8x10-2 Ωcm - ZnO:Al film thickness : 300 nm
- ZnO:Al electrical parameters:
n=3.6x1020 cm-3 ρ=1.2x10-3 Ωcm - Uniform coverage of three-dimensional surface (nanorods)
- Growth controll in the nanometer scale
|
Schematic drawings of the investigated solar cells structures based on zinc oxide layers.
|
Light current-voltage characteristics for the ZnO:Al/ZnO/Si/Al heterostructures.
|
Spectral response of the invastigeted PV structure based on zinc oxide layers.
|
|