Aluminum-doped zinc oxide conducting films

Description

Conducting layers of zinc oxide doped with aluminum (ZnO:Al) are deposited by atomic layer deposition (ALD) on any available substrates, at optimal growth temperature up to 200 ^oC. We determined growth parameters ensuring very low electrical resistivities of the films. ZnO:Al conducting films have high optical transmission in the visible range. Thus, such films can find range of applications in electronics, photovoltaics and optoelectronics.

Parameters

• Film thicknesses: < 1 micrometer
• Optical transmission: ~90 %
• Carrier type: n
• Resistivity: ~10^-4Ωcm
• Sheet resistances as low as <10 Ω/sq.
• High uniformity of dopant distribution

Applications

• transparent electrodes
• organic electronics