Materials - Aluminum-doped zinc oxide conducting films

Aluminum-doped zinc oxide conducting films


Conducting layers of zinc oxide doped with aluminum (ZnO:Al) are deposited by atomic layer deposition (ALD) on any available substrates, at optimal growth temperature up to 200 oC. We determined growth parameters ensuring very low electrical resistivities of the films. ZnO:Al conducting films have high optical transmission in the visible range. Thus, such films can find range of applications in electronics, photovoltaics and optoelectronics.



  • Film thicknesses: < 1 micrometer
  • Optical transmission: ~90 %
  • Carrier type: n
  • Resistivity: ~10-4Ωcm
  • Sheet resistances as low as <10 Ω/sq.
  • High uniformity of dopant distribution



  • transparent electrodes
  • organic electronics

Resistivities of ZnO:AL films with 200 nm, deposited on glass by ALD, as a function of the Al content (in at.%)

Optical transmission of ZnO:Al films with various thicknesses grown on glass by ALD