Characterization - Laboratory for Ion Beam Techniques

Laboratory for Ion Beam Techniques


The laboratory is an inter-institute unit comprising research groups from both Institute of Electron Technology and Institute of Physics. It is equipped with a new NEC 3SDH-2 Tandem Pelletron accelerator and a high-sensitivity Cameca IMS 6F Secondary Ion Mass Spectro- meter (SIMS). In addition we have direct access to other complementary analytical techniques such as SEM, TEM, AFM, XRD etc.



  • implantation with energies up to 3 MeV
  • implantation of all ions from hydrogen to uranium (with the exception of noble gases)
  • SIMS analysis of virtually all elements
  • SIMS detection limits from 1016 down to 1012 ion/cm3



RBS measurements allows to determine the composition and stoichiometry of thin films. Primary He++ beam can be accelerated to energies up to 3 MeV. Channelling measurements (RBS/c) are utilized to evaluate population of defects in crystalline materials. The accelerator implanter can produce large variety of ions with energy from ≈200 keV to 3 MeV. This makes it possible to modify the properties of solid samples and to introduce foreign atoms to depths reaching several micrometers for light elements. Note that ion energy in conventional implanters is limited to ≈250 keV. Recent studies conducted in the Lab concerns the mobility of hydrogen implanted into silicon carbide. Secondary Ion Mass Spectrometry is especially suited to analyze the dopants as well as contaminants at an extremely low concentration level. The field of interest covers a wide spectrum of materials from semiconductors to metals. High depth resolution of the SIMS profiling is advantageous to measure layered structures. The Lab specializes in the detection and the profiling of unprecedently low content of so called "atmospheric" species such as H, C, N and O. This is because analytical chamber of our instrument is equipped with an ion pump instead of commonly installed turbomolecular.

NEC 3SDH-2 Pelletron accelerator.

Cameca IMS 6F Secondary Ion Mass Spectrometer (SIMS).

SIMS depth profile of the main constituents of GaAs/AlGaAs laser structure as well as dopant species.